I have always found it helpful to discuss projects with someone without a scientific background as they can ask questions which can bring about new ideas and thoughts about my work. Yesterday, I had one such conversation and realised that I had misunderstood something very important about the previous etching process from
my last nanotechnology project.
Review of the photolithography and etching process
To understand the error I made regarding the etch patterns, I will try to summarise the photolithography and etching of SI wafers procedure below:
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Cross sectional view of different layers. The clean wafer is placed in a hot oven for a short time so that a photo
resist polymer layer can adhere better. The photo resist layer is
spread over the surface evenly by spin coating. |
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Fig 2. Exposing the photoresist. The wafer is put in a machine where UV light is directed through a photo
mask such that any part of the photo mask that does not block the UV
light (like a theatre light gobo) and will allow it through to the wafer (yellow lines above). The UV light will alter the photo resist in these areas of the wafer. |
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Fig 3. Plasma (dry) etching of substrate. The wafer is then placed in a solution bath and the altered photo resist is
removed in a similar way to how photography development is done. The
wafer is then etched by plasma in the areas not protected by the
photoresist. |
Figure 4 & 5 below: I had assumed that the photo mask had worked such that the patterns were etched down into the wafer. However,
the opposite happened and the result are patterns which are raised from the surface because everything except the pattern was exposed and developed. This means that the container design must be altered to take into account this different setup. D'oh!
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Fig 4. WRONG! It was thought that the pattern would be etched into the wafer which was not the case (round silicon wafer shown in light grey). |
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Fig 5. CORRECT! The majority of the wafer was exposed and developed such that the plasma ate away at everything except the pattern, leaving it extruded from the surface (round silicon wafer shown in light grey). |
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